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| 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features * 4.8 Volt Operation * +31.0 dBm Pout @ 900 MHz, Typ. * 70% Collector Efficiency @ 900 MHz, Typ. * 9 dB Power Gain @ 900 MHz, Typ. * -29 dBc IMD3 @ Pout of 24 dBm per tone, 900 MHz, Typ. * Internal Input Pre-Matching Facilitates Cascading * 50% Smaller than SOT-223 Package MSOP-3 Surface Mount Plastic Package Outline 25 Description Agilent's AT-33225 is a low cost, NPN power silicon bipolar junction transistor housed in a miniature MSOP-3 surface mount plastic package. This device is designed for use as an output device for AMPS and ETACS mobile phones. The AT-33225 features over 1 watt CW output power when operated at 4.8 volts. Excellent gain and superior efficiency make the AT-33225 ideal for use in battery powered systems. The AT-33225 is fabricated with Agilent's 10 GHz FT Self-AlignedTransistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices. Pin Configuration COLLECTOR 4 EMITTER 1 2 BASE 3 EMITTER Applications * Output Power Device for AMPS and ETACS Handsets * 900 MHz ISM 2 AT-33225 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2] Junction Temperature Storage Temperature Units V V V mA W C C Absolute Maximum[1] 1.4 16.0 9.5 640 1.6 150 -65 to 150 Thermal Resistance[3]: jc = 40C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Derate at 25 mW/C for TC > 85C. Tc is defined to be the temperature of the collector pin 4, where the lead contacts the circuit board. 3. Using the liquid crystal technique, VCE = 4.5 V, Ic = 100 mA, Tj =150C, 1- 2 m "hot-spot" resolution. Electrical Specifications, TC = 25C Symbol Parameters and Test Conditions Freq. = 900 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit A, unless otherwise specified Units Min. Typ. Max. Pout C IMD3 Output Power [1] Collector Efficiency [1] 3rd Order Intermodulation Distortion, 2 Tone Test, Pout each Tone = +24 dBm [1] Mismatch Tolerance, No Damage [1] Pin = +22 dBm Pin = +22 dBm F1 = 899 MHz F2 = 901 MHz dBm % dBc +30.0 60 +31.0 70 -29 7:1 Pout = +31 dBm any phase, 2 sec duration IE = 0.4 mA, open collector IC = 2.0 mA, open emitter IC = 10.0 mA, open base VCE = 3 V, IC = 180 mA VCEO = 5 V V V V -- A 1.4 16.0 9.5 80 150 BVEBO BVCBO BVCEO hFE ICEO Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Forward Current Transfer Ratio Collector Leakage Current 330 30 Note: 1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (ETACS/ISM). 3 AT-33225 Typical Performance, TC = 25C Frequency = 900 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit A (ETACS/ISM), unless otherwise specified. 33 30 COLLECTOR EFFICIENCY (%) 30 27 24 21 18 15 12 9 6 2 6 10 14 18 INPUT POWER (dBm) Pout 70 60 50 COLLECTOR EFFICIENCY (%) source = 0.82 -163 load = 0.67 -174 90 80 35 source = 0.82 -163 load = 0.67 -174 90 80 70 60 50 40 30 20 10 0 2 source = 0.82 -163 load = 0.67 -174 OUTPUT POWER (dBm) OUTPUT POWER (dBm) 25 20 15 10 5 0 2 6 10 14 18 22 24 INPUT POWER (dBm) 3.6 V 4.8 V 6.0 V c 40 30 20 10 0 22 24 3.6 V 4.8 V 6.0 V 6 10 14 18 22 24 INPUT POWER (dBm) Figure 1. Output Power and Collector Efficiency vs. Input Power. Figure 2. Output Power vs. Input Power Over Bias Voltage. Figure 3. Collector Efficiency vs. Input Power Over Bias Voltage. 34 30 source = 0.82 -163 load = 0.67 -174 -15 -20 -25 source = 0.82 -163 load = 0.67 -174 RETURN LOSS (dB) 5 0 -5 -10 -15 -20 source = 0.82 -163 load = 0.67 -174 Output R.L. OUTPUT POWER (dBm) 26 22 18 14 10 6 2 6 10 TC = +85C TC = +25C TC = -40C 14 18 22 24 IMD (dBc) -30 -35 -40 -45 11 IMD3 Input R.L. -25 -30 800 IMD5 13 15 17 19 21 23 25 27 850 900 950 1000 INPUT POWER (dBm) OUTPUT POWER/TONE (dBm) FREQUENCY (MHz) Figure 4. Output Power vs. Input Power Over Temperature. Figure 5. IMD3, IMD5 vs. Output Power Per Tone. Figure 6. Input and Output Return Loss vs. Frequency. 4 AT-33225 Typical Performance, TC = 25C Frequency = 836.5 MHz, VCE = 4.8 V, ICQ = 6 mA, CW operation, Test Circuit B (AMPS), unless otherwise specified. 33 30 OUTPUT POWER (dBm) COLLECTOR EFFICIENCY (%) 30 OUTPUT POWER (dBm) 27 24 21 18 15 12 9 6 2 6 10 14 18 INPUT POWER (dBm) Pout 70 60 50 COLLECTOR EFFICIENCY (%) source = 0.81 -165 load = 0.66 -174 90 80 35 source = 0.81 -165 load = 0.66 -174 90 80 70 60 50 40 30 20 10 0 2 source = 0.81 -165 load = 0.66 -174 25 20 15 10 5 0 2 6 10 14 18 22 24 INPUT POWER (dBm) 3.6 V 4.8 V 6.0 V c 40 30 20 10 0 22 24 3.6 V 4.8 V 6.0 V 6 10 14 18 22 24 INPUT POWER (dBm) Figure 7. Output Power and Collector Efficiency vs. Input Power. Figure 8. Output Power vs. Input Power Over Bias Voltage. Figure 9. Collector Efficiency vs. Input Power Over Bias Voltage. 5 0 RETURN LOSS (dB) source = 0.81 -165 load = 0.66 -174 Output R.L. -5 -10 -15 Input R.L. -20 -25 750 800 836.5 850 900 950 FREQUENCY (MHz) Figure 10. Input and Output Return Loss vs. Frequency. 5 AT-33225 Typical Large Signal Impedances VCE = 4.8 V, ICQ = 6 mA, Pout = +31.0 dBm Freq. MHz 750 800 850 900 950 Mag. 0.77 0.80 0.82 0.82 0.83 source 10.0 9.5 Ang. -162 -169 -164 -163 -166 Mag. 0.64 0.67 0.64 0.67 0.74 9.0 load Ang. -174 -173 -175 -174 -175 Ccb (pF) 8.5 8.0 7.5 7.0 6.5 6.0 0 2 4 6 8 10 Vcb (V) Figure 11. Collector-Base Capacitance vs. Collector-Base Voltage (DC Test). SPICE Model Parameters Die Model CPad C CPad B CPad Packaged Model Cbc RB LB2 RB LB3 CM LE2 LE2 Die Die Area = 1.2 CPad = 0.3 pF Label BF IKF ISE NE VAF NF TF XTF VTF ITF PTF XTB BR IKR ISC NC VAR NR Value 280 299.9 9.9E-11 2.399 33.16 0.9935 1.6E-11 0.006656 0.02785 0.001 23 0 54.61 81 8.7E-13 1.587 1.511 0.9886 E1 Label TR EG IS XTI CJC VJC MJC XCJC FC CJE VJE MJE RB IRB RBM RE RC Value 1E-9 1.11 3.598E-15 3 0.8E-12 0.4831 0.2508 0.001 0.999 6.16E-12 1.186 0.5965 0.752 0 0.01 1.27 0.107 E2 LB1 B R1 Cbe RB LB2 RB LB3 CM LE2 Die LC1 Cce C LE2 R1 LE1 E Label Cbc Cbe Cce CM LB1 LB2 LB3 LE1 LE2 LC1 RB R1 Value 0.80 pF 0.006 pF 3.17 pF 20.8 pF 0.63 nH 0.10 nH 0.87 nH 0.35 nH 0.78 nH 0.74 nH 0.1 0.2 6 AT-33225 Typical Scattering Parameters, Common Emitter, ZO = 50 VCE = 3.6 V, IC = 200 mA, TC = 25C Freq. S11 GHz Mag. Ang. dB 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 0.88 0.89 0.88 0.85 0.77 0.70 0.71 0.93 0.98 0.98 0.98 0.87 0.88 0.88 0.85 0.78 0.72 0.72 0.93 0.98 0.98 0.98 0.87 0.88 0.88 0.85 0.78 0.72 0.73 0.92 0.98 0.98 0.98 -164 -174 178 172 168 171 178 178 169 163 159 -162 -172 179 172 169 172 178 177 169 163 159 -161 -172 179 173 169 172 177 177 169 163 158 27.0 21.2 13.6 9.1 8.2 8.5 8.2 2.3 -5.5 -13.6 -23.2 27.1 21.4 13.8 9.2 8.2 8.4 8.1 2.6 -5.1 -13.0 -22.2 27.3 21.5 13.9 9.3 8.3 8.4 8.1 2.7 -5.0 -12.7 -21.7 S21 Mag. 22.26 11.42 4.80 2.85 2.58 2.67 2.57 1.30 0.53 0.21 0.07 22.76 11.69 4.91 2.89 2.58 2.62 2.53 1.35 0.56 0.22 0.08 23.07 11.86 4.97 2.93 2.59 2.63 2.53 1.37 0.57 0.23 0.08 Ang. 99 91 79 62 38 13 -10 -68 -97 -119 -163 100 91 78 61 37 13 -9 -66 -97 -119 -159 100 91 78 61 37 13 -9 -65 -96 -119 -158 dB -34.9 -34.0 -30.5 -25.8 -23.2 -23.4 -26.0 -26.6 -20.5 -18.1 -16.4 -34.4 -33.6 -30.2 -26.0 -23.6 -24.0 -26.4 -26.7 -20.5 -18.1 -16.5 -34.4 -33.6 -30.5 -26.2 -23.7 -24.2 -26.6 -26.7 -20.5 -18.1 -16.5 S12 Mag. 0.018 0.020 0.030 0.051 0.069 0.068 0.050 0.047 0.094 0.125 0.151 0.019 0.021 0.031 0.050 0.066 0.063 0.048 0.046 0.094 0.125 0.150 0.019 0.021 0.030 0.049 0.065 0.062 0.047 0.046 0.094 0.125 0.150 S22 Ang. 26 32 47 51 40 25 14 93 86 78 72 25 30 44 49 39 26 17 93 86 78 72 25 30 44 49 39 26 18 94 86 78 72 Mag. 0.58 0.57 0.56 0.49 0.34 0.36 0.59 0.98 0.97 0.93 0.90 0.55 0.53 0.52 0.45 0.33 0.38 0.59 0.98 0.97 0.92 0.90 0.54 0.52 0.51 0.44 0.32 0.38 0.60 0.98 0.97 0.92 0.90 Ang. -153 -168 -179 175 -177 -142 -133 -162 180 170 164 -149 -166 -178 177 -171 -138 -132 -161 -179 171 165 -149 -166 -178 177 -169 -137 -131 -160 -179 171 165 VCE = 4.8 V, IC = 150 mA, TC = 25C VCE = 6.0 V, IC = 150 mA, TC = 25C Typical Performance 40 30 20 MSG MAG MSG 40 30 20 MSG MAG MSG 40 30 20 MSG MAG MSG GAIN (dB) GAIN (dB) 10 |S21|2 0 -10 -20 -30 0.05 10 |S21|2 0 -10 -20 -30 0.05 GAIN (dB) 10 |S21|2 0 -10 -20 -30 0.05 0.25 0.75 1.00 1.50 2.00 0.25 0.75 1.00 1.50 2.00 0.25 0.75 1.00 1.50 2.00 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 12. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency, VCE = 3.6 V, IC = 200 mA. Figure 13. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency, VCE = 4.8 V, IC = 150 mA. Figure 14. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency, VCE = 6.0 V, IC = 150 mA. 7 Test Circuit A: Test Circuit Board Layout @ 900 MHz (ETACS/ISM) VBB VBB R2 R1 T1 R3 C2 R4 C3 L1 R5 C6 L2 C5 C8 C9 9/96 VCC VCC C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2 100.0 pF 100.0 pF 100.0 nF 7.5 pF 100.0 nF 100.0 pF 5.1 pF 1.5 F 10.0 F 100.0 pF 2.2 750.0 2.2 10.0 10.0 MBT 2222A 18.0 H 18.0 H 38.1 (1.5) C1 C4 C7 C10 INPUT PA3 DEMO 76.2 (3.0) B-MFG0141 OUTPUT CW Test VCE = 4.8 V ICQ = 6.0 mA Freq. = 900 MHz Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031) NOTE: Dimensions are shown in millimeters (inches). Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz (ETACS/ISM) VBB CW Test VCE = 4.8 V ICQ = 6.0 mA Freq. = 900 MHz VCC 2.2 B DC C E Transistor 750 2.2 10 100 nF 10 100 pF 80 /4 @ 900 MHz 100 pF 80 /4 @ 900 MHz 50 100 pF RF OUT = 14.35 (.565) 5.1 pF 100 nF 1.5 F 10 F 18 H 18 H 100 pF RF IN 7.5 pF 50 = 7.06 (.278) 8 Test Circuit B: Test Circuit Board Layout @ 836.5 MHz (AMPS) VBB VBB C2 R2 R1 T1 R3 L1 R4 C4 C5 L2 R5 C6 C8 C9 9/96 VCC VCC C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2 100.0 pF 100.0 nF 9.5 pF 100.0 pF 100.0 pF 100.0 nF 6.8 pF 1.5 F 10.0 F 100.0 pF 2.2 750.0 2.2 10.0 10.0 MBT 2222A 18.0 H 18.0 H 38.1 (1.5) C1 C3 C7 C10 INPUT PA3 DEMO 76.2 (3.0) B-MFG0141 OUTPUT CW Test VCE = 4.8 V ICQ = 6.0 mA Freq. = 836.5 MHz Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031) NOTE: Dimensions are shown in millimeters (inches). Test Circuit B: Test Circuit Schematic Diagram @ 836.5 MHz (AMPS) VBB CW Test VCE = 4.8 V ICQ = 6.0 mA Freq. = 836.5 MHz VCC 2.2 B DC C E Transistor 750 2.2 10 100 nF 10 100 pF 80 /4 @ 836.5 MHz 100 pF 80 100 nF 1.5 F 10 F 18 H 18 H /4 @ 836.5 MHz 50 100 pF RF OUT = 12.65 (.498) 6.8 pF 100 pF RF IN 9.5 pF 50 = 7.19 (.283) 9 Part Number Ordering Information Part Number AT-33225-TR1 AT-33225-BLK No. of Devices 1000 25 Container 7" Reel Carrier Tape Package Dimensions MSOP-3 Surface Mount Plastic Package 3.12/3.23 (.123/.127) R 0.25 (.010) MAX 0.18/0.25 (.007/.010) SEE DETAIL A 4.62/5.03 (.182/.198) 0.76 REF (.030) 2.64/2.82 (.104/.111) 0.51 (.020) DIA X 0.15 (.006) DEEP REF PIN 1 0.76 REF (.030) 1.91 (.075) BASIC 4.80/5.00 (.189/.197) TOP VIEW 1.09/1.42 (.043/.056) 1.22/1.60 (.048/.063) SEATING PLANE 0.58/0.69 (.023/.027) SIDE VIEW LEAD TIP COPLANARITY 0.10 (.004) 0.10/0.25 (.004/.010) R 0.20 (.008) MIN R 0.20/0.33 (.008/.013) 0.25 (.010) GAUGE PLANE SEATING PLANE 0 MIN/8 MAX 0.41/0.86 (.016/.034) DETAIL A NOTE: DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 10 Tape Dimensions and Product Orientation for Package MSOP-3 REEL CARRIER TAPE USER FEED DIRECTION COVER TAPE 2.00 0.05 (.079 .002) 1.75 (.069) 1.5 (.059) 4.0 (.157) 0.30 0.05 (.012 .002) 5.50 0.05 (.217 .002) 12.0 0.3 5.2 (.472 .012) (.205) R 0.3 (.012) R 0.5 (.020) TYP 8.0 (.315) 1.5 (.059) 5.2 (.205) 1.75 (.069) NOTES: 1. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 2. TOLERANCES: .X 0.1 (.XXX .004) www.semiconductor.agilent.com Data subject to change. Copyright (c) 1999 Agilent Technologies 5965-5910E (11/99) |
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